ROBERT NORTON NOYCE(in English) - Poem-acrostic-homage n.4.136 By Silvia Araújo Motta/Belo Horizonte-MG-Brazil.

ROBERT NORTON NOYCE(in English)
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Poem-acrostic-homage n.4.136
By Silvia Araújo Motta/Belo Horizonte-MG-Brazil.
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R-Robert Norton Noyce was the {Mayor
O-Of Silicon Valley}.He was born in Iowa:
B-Burlington, on DECEMBER, 12, 1927. He
E-Exhibited a big talent for math and Science,
R-Recognized Senior Year, in Grinnell College;
T-Too co-founded Fairchild Semiconductor/1957.
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N-Noyce received from Massachusetts Institute
O-Of Technology his PhD. in PHYSICS. The
R-Revolution in personal computer, with J.Killby:
T-The famous invention: {Silicon Valley} with
O-Of the Integrated Circuit of MICROCHIP.
N-Noyce was honored by 3 Presidents of USA.
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N-Norton Noyce suffered a heart attack at home
O-On June, 1990 and died with only 62 years.
Y-Yes! The Noyce/1991 was founded by his family.He
C-Cadastred 15 Patents. He had four sons, 2 sponsers:
E-Elizabeth Bottomely and Ann Bowers, in USA.
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Belo Horizonte/Minas Gerais, Brazil, on December, 12 , 2011.
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Divulgation:
http://www.recantodasletras.com.br/acrosticos/3384521
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Fonte:
http://en.wikipedia.org/wiki/Robert_Noyce
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NOTE:
Noyce was granted 15 patents.
1-U.S. Patent 2,875,141 Method and apparatus for forming semiconductor structures, filed August 1954, issued February 1959, assigned to Philco Corporation.
2-U.S. Patent 2,929,753 Transistor structure and method, filed April 1957, issued March 1960, assigned to Beckmann Instruments.
3-U.S. Patent 2,959,681 Semiconductor scanning device, filed June 1959, issued November 1960, assigned to Fairchild Semiconductor.
4-U.S. Patent 2,968,750 Transistor structure and method of making the same, filed March 1957, issued January 1961, assigned to Clevite Corporation.
5-U.S. Patent 2,971,139 Semiconductor switching device, filed June 1959, issued February 1961, assigned to Fairchild Semiconductor.
6-U.S. Patent 2,981,877 Semiconductor Device and Lead Structure, filed July 1959, issued April 1961, assigned to Fairchild Semiconductor.
7-U.S. Patent 3,010,033 Field effect transistor, filed January 1958, issued November 1961, assigned to Clevite Corporation.
8-U.S. Patent 3,098,160 Field controlled avalanche semiconductive device, filed 9-February 1958, issued July 1963, assigned to Clevite Corporation.
9-U.S. Patent 3,108,359 Method for fabricating transistors, filed June 1959, issued October 1963, assigned to Fairchild Camera and Instrument Corp.
10-U.S. Patent 3,111,590 Transistor structure controlled by an avalanche barrier, filed June 1958, issued November 1963, assigned to Clevite Corporation.
11-U.S. Patent 3,140,206 Method of making a transistor structure (coinventor William Shockley), filed April 1957, issued July 1964, assigned to Clevite Corporation.
12-U.S. Patent 3,150,299 Semiconductor circuit complex having isolation means, filed September 1959, issued September 1964, assigned to Fairchild Camera and Instrument Corp.
13-U.S. Patent 3,183,129 Method of forming a semiconductor, filed July 1963, issued May 1965, assigned to Fairchild Camera and Instrument Corp.
14-U.S. Patent 3,199,002 Solid state circuit with crossing leads, filed April 1961, issued August 1965, assigned to Fairchild Camera and Instrument Corp.
15-U.S. Patent 3,325,787 Trainable system, filed October 1964, issued June 1967, assigned to Fairchild Camera and Instrument Corp.
Fonte:
http://en.wikipedia.org/wiki/Robert_Noyce
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Divulgation:
http://www.recantodasletras.com.br/acrosticos/3384521